Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si
نویسندگان
چکیده
We demonstrate the first electrically pumped quantum-dot micro-ring lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 μm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°C. OCIS codes: (230.5590) Quantum-well, -wire and -dot devices; (140.5960) Semiconductor lasers; (140.3948) Microcavity devices; (160.3130) Integrated optics materials
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